Papers on semiconductor lasers

(1990-2004 , since 1992 with FBH)

Laser structures and reliability

I. Rechenberg, G. Beister, F. Bugge, G. Erbert, S. Gramlich, A. Klein, J. Maege, M. Pilatzek, U. Richter, S. S. Ruvimov, H. Treptow, M. Weyers, “Potential sources of degradation in AlGaAs/GaAs laser diodes“, Materials Science and Engineering B28 (1994), 310.

P. G. Eliseev, G. Beister, A. E. Drakin, I. V. Akimova, G. Erbert, J. Maege, J. Sebastian, “Power hysteresis and waveguide bistability of stripe quantum-well InGaAs/GaAs/GaAlAs heterolasers with a strained active layer“, Quantum Electronics 24 (1995), No. 4, 291.

G. Erbert, G. Beister, F. Bugge, J. Maege, P. Ressel, J. Sebastian, K. Vogel, H. Wenzel, M. Weyers, "Stable operation of InGaAs/InGaP/AlGaAs ( = 1020 nm) laser diodes", Electronics Letters 33 (1997) 778.

F. Bugge, G. Beister, G. Erbert, S. Gramlich, K. Vogel, U. Zeimer, M. Weyers, "GaInP/AlGaAs/GaAs laser diodes with high output power", Proceedings of 23th ISCS, Inst. Phys. Conf. Ser. 155 (1997) 573.

G. Beister, F. Bugge, G. Erbert, J. Maege, P. Ressel, J. Sebastian, A. Thies and H. Wenzel, "Monomode emission at 350 mW and high reliability with InGaAs/AlGaAs (wavelength=1020 nm) ridge waveguide laser diodes", Electronics Letters, 34, (1998), 778.

G. Beister, F. Bugge, G. Erbert, J. Maege, P. Ressel, J. Sebastian, A. Thies and H. Wenzel, "Reliable high-power InGaAs/AlGaAs ridge waveguide laser diodes", CLEO/EUROPE '98, Techn. Digest, p. 88 (C Tul 36), (1998).

G. Beister, G. Erbert, A. Knauer, J. Maege, P. Ressel, J. Sebastian, R. Staske, H. Wenzel, "High-Power and High Temperature Long-Term Stability of Al-free 950 nm Laser Structures on GaAs", Electronics Letters, Vol. 35, No. 19, pp. 1641 - 1642, 1999.

F. Bugge, A. Knauer, S. Gramlich, I. Rechenberg, G. Beister, J. Sebastian, H. Wenzel, G. Erbert, M. Weyers, "MOVPE Growth of AlGaAs/GaInP Diode Lasers", J. of Electronic Mat., 29, 1, pp. 57-61, 2000.

G. Erbert, G. Beister, A. Knauer, J. Maege, W. Pittroff, P. Ressel, J. Sebastian, R. Staske, H. Wenzel, M. Weyers, G. Tränkle, "Al-free 950nm BA diode lasers with high efficiency and reliability at 50°C ambient temperature", Proceedings of SPIE, Volume 3945, pp. 301-307, 2000.

B. Sumpf, G. Beister, G. Erbert, J. Fricke, A. Knauer, W. Pittroff, P. Ressel, J. Sebastian, H. Wenzel, G. Tränkle "Tensile-Strained GaAsP-AlGaAs Laser Diodes for Reliable 1.2-W Continuous-Wave Operation at 735 nm" IEEE Photonics Technology Letters, vol. 13, pp. 7-9, 2001.

R. Hülsewede, J. Sebastian, H. Wenzel, G. Beister, A. Knauer, G. Erbert "Beam Quality of High-Power 800 nm Broad-Area Laser Diodes with 1µm- and 2µm Large Optical Cavity Structures" Optics Communications, vol. 192, p. 69-75, 2001.

G. Erbert, G. Beister, R. Hülsewede, A. Knauer, W. Pittroff, J. Sebastian, H. Wenzel, M. Weyers, G. Tränkle "High-Power Highly Reliable Al-Free 940-nm Diode Lasers" IEEE Journal on Selected Topics in Quantum Electronics, Vol. 7, No. 2, March/April, pp. 143-148 (2001).

J. Sebastian, G. Beister, F. Bugge, F. Buhrandt, G. Erbert, H.G. Hänsel, R. Hülsewede, A. Knauer, W. Pittroff, R. Staske, M. Schröder, H. Wenzel, M. Weyers, G. Tränkle "High-Power 810-nm GaAsP-AlGaAs Diode Lasers With Narrow Beam Divergence" IEEE Journal on Selected Topics in Quantum Electronics, Vol. 7, No. 2, March/April, pp. 334-339 (2001).

B. Sumpf, G. Beister, G. Erbert, J. Fricke, A. Knauer, W. Pittroff, P. Ressel, J. Sebastian, H. Wenzel, G. Tränkle "2W reliable operation of = 735 nm GaAsP/AlGaAs laser diodes" Electronics Letters vol. 37, No.6, pp. 351-353 (2001).

G. Erbert, G. Beister, F. Bugge, A. Knauer, R. Hülsewede, W. Pittroff, J. Sebastian, H. Wenzel, M. Weyers. G. Tränkle "Performance of 3-W/100-µm stripe diode laser at 950 and 810 nm" Proceedings SPIE 4287, 93-102 (2001).

W. Pittroff, G. Erbert, G. Beister, F. Bugge, A. Klein, A. Knauer, J. Maege, P. Ressel, J. Sebastian, R. Staske, and G. Tränkle "Mounting of High Power Laser Diodes on Boron Nitride Heat Sinks Using an Optimized Au/Sn Metallurgy" IEEE Trans. on Advanced Packaging, Vol. 24, No. 4, pp. 434-441, Nov. 2001.


Diagnostics and Simulations

G. Beister, J. Maege, H.-G. Bach, “Capacitance-voltage dependence for isotype AlGaAs/GaAs heterointerfaces comprising recharcheable traps“, Solid-State Electronics 33 (1990), No. 2, 227.

G. Beister, “Evaluation of electroluminescence current and voltage dependence in ridge waveguide laser structures”, Solid-State Electronics 34 (1991), No. 11, 1255.

W. Pittroff, H.-G. Bach, G. Beister, “On the numerical simulation of C-V measurements at isotype and anisotype heterojunctions”, Microelectronic Engineering 15 (1991), 597.

W. Pittroff, H.-G. Bach, G. Beister, “Numerical modelling of carrier profiles in isotype and anisotype heterojunction devices”, Solid-State Electronics 35 (1992), 815.

G. Beister, J. Maege, D. Gutsche, G. Erbert, J. Sebastian, K. Vogel, M. Weyers, J. Würfl, O. P. Daga, "Simple Method for Examining Sulphur Passivation of Facets in InGaAs-AlGaAs (=0.98 m) Laser Diodes", Appl. Phys. Lett. 68 (1996) 2467.

G. Beister, J. Maege, J. Sebastian, G. Erbert, L. Weixelbaum, M. Weyers, J. Würfl, O. P. Daga, "Stability of Sulfur-Passivated Facets of InGaAs-AlGaAs Laser Diodes", IEEE Photon. Technol. Lett. 8 (1996) 1124.

I. Rechenberg, A. Höpner, J. Maege, A. Klein, G. Beister, M. Weyers, "Heating and damage of InGaAs/GaAs/AlGaAs laser facets", Proceedings of IX. IC on Microscopy of Semiconductor Materials, Inst. Phys. Conf. Ser. 146 (1996) 587.

G. Beister, J. Maege, G. Erbert, I. Rechenberg, J. Sebastian, M. Weyers, J. Würfl, "Method for observation of facet degradation and stabilization in InGaAs/AlGaAs laser diodes", 23rd Int. Symp. Compound Semiconductors, Inst. Phys. Conf. Ser. No. 155 (1997) 581.

G. Beister, J. Maege, G. Erbert, G. Tränkle, "Nonradiative current in InGaAs/AlGaAs laser diodes as a measure of facet stability", Solid-State Electronics, 42 (1998), 1939.

I. Rechenberg, U. Richter, A. Klein, W. Höppner, J. Maege, G. Beister, M. Weyers, "Atomic processes at the laser front facet during laser operation", Proceedings of DRIP VII, Inst. Phys. Conf. Ser. 160 (1998).

I. Rechenberg, U. Richter, A. Klein, W. Höppner, J. Maege and G. Beister, "Early stage of facet degradation of 980nm pump laser diodes", Proceedings of DRIP VII, Inst. Phys. Conf. Ser. 160 (1998) 479.

I. Rechenberg, H. Wenzel, A. Knauer, G. Beister, "Characterization of Laser Structures by EBIC Measurements and Simulation", Solid State Phenomena Vols. 63-64, pp. 69-76, 1998

S. Gramlich, E. Nebauer, J. Sebastian, G. Beister "Damage profile of He implantation in AlGaAs laser diode material detected by photoluminescence" Electronics Letters 37 (7), 463-464 (2001).

A. Klehr, G. Beister, G. Erbert, A. Klein, J. Maege, I. Rechenberg, J. Sebastian, H. Wenzel, and G. Tränkle "Defect recognition via longitudinal mode analysis of high power fundamental mode and broad area edge emitting laser diodes" Journal of Applied Physics, vol. 90, pp. 43-47, 2001.

G. Beister, H. Wenzel, “Comparison of surface and bulk contributions to non-radiative currents in InGaAs/AlGaAs laser diodes“, Semicond.Sci.Technol., vol.19, No. 3, pp. 494-500, 2004.